C-Ku band ultra broadband GaN MMIC amplifier with 20W output power

摘要

This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Circuit (MMIC) high power amplifier (HPA), which features high power and high gain over C-Ku band 115 % relative bandwidth. A C-Ku band (6 ~ 18 GHz) GaN HEMT MMIC amplifier was manufactured and measured. The circuit dimension is 4.8 mm by 4 mm. The fabricated MMIC HPA derived an averaged output power of 20 W with averaged power gain of 9.6 dB over C-Ku band. The output power is state-of-the-art output power for GaN HEMT MMIC amplifiers with more than 100 % relative bandwidth and up to Ku band operation frequency.