Simulation of GaAs/AlGaAs RTD using One-Band Combined Model

机译：一波段组合模型模拟GaAs / AlGaAs RTD

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Presented in this paper are investigations regarding the influence of doping concentration in RTD barriers and on IV-characteristics. One-band combined RTD model is based on semiclassical and quantum-mechanical (the wave-function formalism) approaches. It

机译：本文介绍了有关RTD势垒中掺杂浓度及其对IV特性的影响的研究。单波段组合RTD模型基于半经典和量子力学（波函数形式主义）方法。它

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《Microwave and Telecommunication Technology, 2006 16th International Crimean》|2006年|P.665-666|共2页
会议地点 SevastopolUkraine
作者
I. I. Abramov; I. A. Goncharenko;
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III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; resonant tunnelling diodes; semiconductor device models; GaAs-AlGaAs; IV-characteristics; RTD barriers; doping concentration; one-band combined model; quantum mechanical approaches; quantu;

机译：III-V半导体；铝化合物掺杂分布砷化镓谐振隧道二极管；半导体器件模型； GaAs-AlGaAs； IV特性RTD障碍；掺杂浓度单频段组合模型；量子力学方法量子;

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专利

1. Transient simulation of AlGaAs/GaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs hot-electron transistors [J] . Kuzuhara M., Kim K. IEEE Transactions on Electron Devices . 1989,第1期

机译：AlGaAs / GaAs / AlGaAs和AlGaAs / InGaAs / AlGaAs热电子晶体管的瞬态仿真
2. Numerical Simulation of Current Dependence on Well Widths in AlGaAs/GaAs/AlGaAs Double Barrier Diode Structures [J] . A.H. REZVANI Acta Physica Polonica. A, General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics . 2003,第1期

机译：AlGaAs / GaAs / AlGaAs双势垒二极管结构中电流依赖于阱宽度的数值模拟
3. Modelling and simulation of AlGaAs/GaAs solar cell [J] . Devendra KC, Raju Wagle, Raid Gaib, American Journal of Engineering Research . 2020,第4期

机译：AlgaAs / GaAs太阳能电池的建模与仿真
4. Simulation of GaAs/AlGaAs RTD using One-Band Combined Model [C] . I. I. Abramov, I. A. Goncharenko . 2006

机译：一带组合模型模拟GaAs / AlGaAs RTD
5. Three wave mixing in Periodically Quantum-Well-Intermixed GaAs:AlGaAs superlattices: Modeling, Optimization, and Parametric Generation. [D] . Sigal, Iliya. 2010

机译：GaAs：AlGaAs超晶格在周期性量子阱混合中的三波混合：建模，优化和参数生成。
6. B-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system [O] . Han-Chun Liu, C. Reichl, W. Wegscheider, -1

机译：GaAs / AlGaAs 2D系统中微波激励和直流偏置共同作用下直流电流偏置引起的霍尔电阻的B周期振荡
7. Measurements and Simulations of Hot-Carrier Degradation Effects in AlGaAs/GaAs HFETs [O] . Mazzanti A., Verzellesi G., Basile A.F., 2002

机译：AlGaAs / GaAs HFET中热载流子降解效应的测量和模拟
8. Transient Simulation of AlGaAs/GaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs Hot-Electron Transistors [R] . Hess, K. 1989

机译：alGaas / Gaas / alGaas和alGaas / InGaas / alGaas热电子晶体管的瞬态模拟

Simulation of GaAs/AlGaAs RTD using One-Band Combined Model

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