Strain Analysis of Compositionally Tailored Interfaces in InAs/GaSb Superlattices by Aberration Corrected Transmission Electron Microscopy

机译：InAs / GaSb超晶格中成分定制界面的像差校正透射电子显微镜应变分析

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来源
《Microscopy Society of America Annual Meeting;Microanalysis Society Annual meeting;International Metallographic Society Annual meeting 》|2012年|1808-1809|共2页
会议地点 Phoenix, AZ(US)
作者
K. Mahalingam; H. J. Haugan; G. J. Brown; K. G. Eyink;
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Air Force Research Laboratory Wright-Patterson AFB OH 45433-7707;

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1. Strain analysis of compositionally tailored interfaces in InAs/GaSb superlattices [J] . Mahalingam Krishnamurthy, Haugan Heather J., Brown Gail J., Applied Physics Letters . 2013 ,第21期

机译：InAs / GaSb超晶格中成分定制界面的应变分析
2. Strain analysis of compositionally tailored interfaces in InAs/GaSb superlattices [J] . Krishnamurthy Mahalingam, Heather J. Haugan, Gail J. Brown, Applied Physics Letters . 2013 ,第21期

机译：InAs / GaSb超晶格中成分定制界面的应变分析
3. Quantitative analysis of interfacial strain in InAs/GaSb superlattices by aberration-corrected HRTEM and HAADF-STEM [J] . Krishnamurthy Mahalingam, Heather J. Haugan, Gail J. Brown Ultramicroscopy . 2013 ,第Null期

机译：用像差校正的HRTEM和HAADF-STEM定量分析InAs / GaSb超晶格中的界面应变
4. Composition and strain mapping of interfaces in InAs/GaSb superlattices by aberration-corrected high-resolution transmission electron microscopy [C] . K. Mahalingam, rnH. J. Haugan, rnG. J. Brown, Quantum sensing and nanophotonic devices VII . 2010

机译：InAs / GaSb超晶格中界面的组成和应变映射的像差校正高分辨率透射电子显微镜
5. Characterization of Electrochemical and Electronic Materials by in situ and Aberration-Corrected Scanning Transmission Electron Microscopy [D] . Holtz, Megan Elizabeth. 2017

机译：用原位和像差校正扫描透射电子显微镜表征电化学和电子材料
6. In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces [O] . Shujie Wu, Yonghai Chen, Jinling Yu, 2013

机译：具有交替界面的InAs / GaSb超晶格的面内光学各向异性
7. Characterisation of InAs/GaAs short period superlattices using column ratio mapping in aberration-corrected scanning transmission electron microscopy [O] . Robb, P.D., Finnie, M., Craven, A.J. 2012

机译：在像差校正扫描透射电子显微镜中使用柱比映射表征Inas / Gaas短周期超晶格
8. In-Situ Study of Dynamic Phenomena at Metal Nanosolder Interfaces Using Aberration Corrected Scanning Transmission Electron Microscopy. [R] . Lu, P., Boyle, J., Neville, M. L., 2014

机译：利用像差校正扫描透射电子显微镜原位研究金属纳米导体界面的动态现象。

Strain Analysis of Compositionally Tailored Interfaces in InAs/GaSb Superlattices by Aberration Corrected Transmission Electron Microscopy

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