Comparison of defect formation in O~+ - and Ne~+ -implanted 6H-SiC

摘要

Oxygen introduced by implantation into 6H-SiC forms oxygen-related shallow centres,which act as shallow donors or deep acceptors in a certain analogy with oxygen-related defects in silicon.In order to separate damage-induced defects from those related to the chemical bonding of oxygen,implantation of the noble gas neon was also performed with similar profiles as for oxygen.The structural characteristics of these defects were studied.