Dept. of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109;
Dept. of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109;
Dept. of Materials Science and Engineering, Penn. State University, University Park, PA 16802;
Dept. of Materials Science and Engineering, Penn. State University, University Park, PA 16802;
Dept. of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109;
机译:通过在生长在半极性(1122)GaN直立衬底上的(Al,In)GaN外延层中的异质界面处的失配位错产生产生部分应变松弛
机译:通过MOVPE在(001)GaAs衬底上外延生长的InAs岛和层中的位错错配松弛
机译:在MgO衬底上外延生长的BaTiO3铁电薄膜的微观结构和应变
机译:通过在SRTIO3底物上生长的纳米级外延铁电BATIO3薄膜中的错位脱位应变松弛
机译:对常规兼柔性基材生长的外延薄膜放松动力学的观察:界面附近的位错滑动的连续模拟
机译:PbTiO3 / SrTiO3外延薄膜中铁电畴的构型和局部弹性相互作用以及失配位错
机译:在SrTiO3衬底上外延生长的BaTiO3 / LaNiO3超晶格的晶格弛豫的原位表征