Silicon Dry Etching Process for High Topography Sub-micro and Nano-devices

摘要

Microelectronic technology developments have been widely used today in MEMS or BIO (1) technologies. Plasma etching was developed more than 30 years ago and commonly used in microelectronic device processing (2). Although MEMS and BIO realizations were also based on this microelectronics standard processing method. But some process developments or sustaining were needed to achieve the high topography of such devices. We have especially developed for sub-micro and nano high topography devices application a silicon etching process based on dry plasma technology. A performed recipe allowed us to fabricate structure similar as these commonly used in MEMS and BIO devices without trenching effect and residual spacer. Silicon etched thickness of 800 shown vertical edge profile compatible with such applications.