LSI/PSI/USP, University of Sao Paulo, Av. Prof. Luciano Gualberto, trav. 3 n. 158, 05508-900, Sao Paulo, SP, Brazil;
Department of Electrical Engineering, Centra Universitario da FEI, Av. Humberto de Alencar Castelo Branco 3972,09850-901, Sao Bernardo do Campo, SP, Brazil;
Department of Electrical Engineering, Centra Universitario da FEI, Av. Humberto de Alencar Castelo Branco 3972,09850-901, Sao Bernardo do Campo, SP, Brazil;
LSI/PSI/USP, University of Sao Paulo, Av. Prof. Luciano Gualberto, trav. 3 n. 158, 05508-900, Sao Paulo, SP, Brazil,Department of Electrical Engineering, Centra Universitario da FEI, Av. Humberto de Alencar Castelo Branco 3972,09850-901, Sao Bernardo do Campo, SP, Brazil;
机译:单轴和双轴应变对完全耗尽SOI nMOSFET线性度的影响分析
机译:镍超合金哈氏合金X在热和机械循环下的机械响应的数字图像相关性研究:单轴和双轴应力状态
机译:单环(SH)绝缘体上硅(SOI)nMOSFET在模拟应用中具有出色的热载流子可靠性
机译:在模拟应用中单轴和双轴机械应力下SOI NMOSFET的比较
机译:单轴和双轴载荷下二维和三维试验样品的弹塑性断裂力学分析。
机译:压阻式悬浮石墨烯膜的性质机电压力下单轴和双轴应变下的应力感测器
机译:单环(SH)绝缘体上硅(SOI)nMOSFET在模拟应用中具有出色的热载流子可靠性
机译:未辐照和辐照Hastelloy-N棒的单轴力学性能的测定和铬化和涂层未辐照哈氏合金-N的双轴应力 - 断裂性能