Fabrication and Characterization of Active Pixel Sensors (APS) Using Simple Metal Gate nMOS Technology

摘要

Active pixel sensors (APS) based on simple nMOS technology with large feature size can offer good sensitivity for photodetection and be a low cost choice for imaging circuits. In this work, we present the design, fabrication and characterization of APSs with 200×200μm photodiodes, which presented an ideality factor of 1.05 and a dark current of -150pA at -V_(DD) (-5V). The APS has worked similarly as the SPICE simulations (error below 7%), presenting a 2.3V output voltage range and total discharge time of 48s when in complete darkness. These results indicate that these sensors can have a good performance in application specific circuits, such as position sensitive detectors and wavefront sensors.