Analysis of the Total Resistance in Standard and Strained FinFET Devices With and Without the Use of SEG

摘要

In this work the total resistance (Rt) behavior is experimentally studied in standard and strained (CESL and sSOI) triple-gate nFinFET devices with and without the use of Selective Epitaxial Growth (SEG). It was verified that the devices with SEG present a better behavior of Rt even for standard devices if compared with strained ones without the use of SEG. For short channel FinFETs (L < 100 nm), the CESL ones present the lowest value of R_t if SEG is used. However, for long channel FinFETs (L > 420 nm), sSOI shows the best behavior with and without the use of SEG. The effective mobility degradation factor (MDF) has also been analyzed showing that devices with SEG and sSOI present the lowest degradation.