Low noise as a diagnostic tool for GaSb based laser diodes prepared by Molecular Beam Epitaxy

机译：低噪声作为分子束外延制备的基于GaSb的激光二极管的诊断工具

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Transport and noise characteristics of forward biased semiconductor lasers diodes GaSb based VCSE (Vertical Cavity Surface Emitting) laser were prepared by MBE (Molecular Beam Epitaxy) were measured in order to evaluate the new MBE technology.

机译：为了评估新的MBE技术，通过MBE（分子束外延）技术制备了正向偏置半导体激光二极管GaSb基VCSE（垂直腔表面发射）激光器的传输和噪声特性。

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来源
《Microelectronics (MIEL), 2012 28th International Conference on》|2012年|p.343- 346|共4页
会议地点 Nis(RS)
作者
Lunak M.; Chobola Z.; Vanek J.; Hulicius E.;
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Stavební fakulta VUT Brno, Ústav fyziky, Žižkova 17, 602 00, Czech Republic;

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原文格式 PDF
正文语种 eng
中图分类微模组件;
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2. Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy [J] . O.S. ROMERO, A.A. ARAGON, N. RAHIMI, Journal of Electronic Materials . 2014,第4期

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3. High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy [J] . Jin-Ming Shang, Jian Feng, Cheng-Ao Yang, 中国物理：英文版 . 2019,第003期

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4. Low noise as a diagnostic tool for GaSb based laser diodes prepared by Molecular Beam Epitaxy [C] . Lunak M., Chobola Z., Vanek J., International Conference on Microelectronics . 2012

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5. Development of gallium nitride-based ultraviolet and visible light-emitting diodes using hydride vapor-phase epitaxy and molecular beam epitaxy. [D] . Cabalu, Jasper Sicat. 2006

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Low noise as a diagnostic tool for GaSb based laser diodes prepared by Molecular Beam Epitaxy

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