Combined method for simulating electron spectrum of δ-doped quantum wells in n-Si

摘要

The combined method to investigate the electron spectrum of single n-type δ-doped quantum wells in silicon is proposed. It is based on computing the electron potential energy by means of the Thomas-Fermi method at finite temperatures; then the obtained potential energy is applied to the iteration procedure with solving the Schrödinger equations for the electron spectrum and the Poisson one for the potential energy. The combined method demonstrates rapid convergence. It is shown that that the simple TF method gives a good approximation for the electron potential energy and for the total electron concentration within the well.