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Amplification of optical phonons in bulk semiconductors and heterostrutures at Low temperatures

机译:低温下体半导体和异质结构中光子的放大

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The amplification of optical phonons both in the bulk semiconductors (the drift of 3D electron gas) and in heterostructures (2D gas) is investigated theoretically. The principal obstacle for observing the amplification of the optical phonons is the heating of the electron gas under drifting. Therefore the low temperatures T < 77 K are considered, and the electron gas is assumed as degenerated. Both hydrodynamic and kinetic approaches have been applied. The kinetic approach yields more adequate values of the increments of instability.
机译:从理论上研究了体半导体(3D电子气的漂移)和异质结构(2D气体)中光子的放大。观察光子的放大的主要障碍是漂移时电子气的加热。因此,考虑了低温T <77K,并且认为电子气已经退化。流体动力学和动力学方法均已应用。动力学方法产生不稳定性增量的更适当的值。

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