Analytical unified drain current model of long-channel tri-gate FinFETs

摘要

A simple unified analytical compact drain current model for undoped (or lightly doped) triple-gate FinFETs is presented, functional for all regions of operation. A unified normalized sheet charge density is used where the behavior of the subthreshold region is embedded within the expressions commonly used to describe the inversion region. The model can be used as a basis for the development of a short-channel model where short-channel effects can be introduced through proper corrections in the core model. The model has been validated by comparing the transfer and output characteristics and their first derivatives with device simulations.