Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology

摘要

Abstract: ventional hydrogen-contained plasma etching for emitter via hole opening can introduce atomic hydrogen into poly emitter. After short time forward current stress, p-n-p transistors fabricated by this process show increase of both current gain ($beta@) and base current 1/f noise in the median bias region. The subsequent low temperature annealing characteristics of p-n-p indicate that hydrogen boron pairs are dissociated. The $beta increase during current stress can be explained by the reduction of effective surface recombination velocity of emitter due to hydrogen boron pair formation.!13