School of Electrical Engineering and Inter-university Semiconductor Research Center, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea;
School of Electrical Engineering and Inter-university Semiconductor Research Center, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea;
School of Electrical Engineering and Inter-university Semiconductor Research Center, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea;
School of Electrical Engineering and Inter-university Semiconductor Research Center, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea;
School of Electrical Engineering and Inter-university Semiconductor Research Center, Seoul National University, San 56-1, Shinli;
机译:后沉积工艺对多晶硅杨氏模量的影响
机译:高温退火引起LPCVD-多晶硅的杨氏模量和内应力的变化
机译:高温退火引起LPCVD-多晶硅的杨氏模量和内应力的变化
机译:纹理与掺杂对多晶硅杨氏模量的影响
机译:掺杂对多晶硅MEMS应用的释放摩擦的影响。
机译:石墨烯血小板(GPL)的取向改变对双轴拉伸下聚合物复合材料杨氏模量的影响
机译:通过拉伸测试的多晶硅薄膜的杨氏模量测量
机译:三元加成对杨氏模量和Nb sub 3 sn的马氏体相变的影响