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Improving SEM Image Quality Using Pixel-Super Resolution Technique

机译:使用像素超分辨率技术提高SEM图像质量

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The most decent scanning electron microscopy (SEM) can provide image magnification up to 500kX which seems to be suitable to image semiconductor devices for the advanced technology nodes. However, SEM images at such a high magnification often suffer from the drift and space related displacement errors, potentially causing image blur and distortion. To circumvent this, we apply the super-resolution (SR) technique to enhance the resolution of the CD-SEM metrology by using the advanced signal processing algorithms. The resolution enhancement can be realized by exploiting the multiple low resolution (LR) images that include unique information of an imaging target by looking at a slightly different position. We experimentally demonstrate image quality improvement gained by the SR technique after correcting the time-dependent drift/displacement and mapping estimated information onto the high resolution (HR) pixel grid with the non-linear pixel interpolation scheme. In addition, estimating the time-dependent drifts of the wafer position could be useful to investigate the drift properties of the CD-SEM tool.
机译:最体面的扫描电子显微镜(SEM)可以提供高达500kX的图像放大倍率,这似乎适合用于先进技术节点的图像半导体器件。但是,如此高放大倍率的SEM图像通常会遭受与漂移和空间相关的位移误差的影响,从而可能导致图像模糊和失真。为了避免这种情况,我们通过使用高级信号处理算法,应用超分辨率(SR)技术来提高CD-SEM度量的分辨率。可以通过查看略微不同的位置来利用包含成像目标的唯一信息的多个低分辨率(LR)图像来实现分辨率增强。我们通过实验证明了在校正与时间有关的漂移/位移并使用非线性像素插值方案将估计信息映射到高分辨率(HR)像素网格后,通过SR技术获得的图像质量改善。另外,估计晶片位置随时间变化的漂移可能有助于研究CD-SEM工具的漂移特性。

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