Improving on-product performance at litho using integrated diffraction-based metrology and computationally designed device-like targets fit for advanced technologies (incl. FinFET)

机译：使用集成的基于衍射的计量技术和适合先进技术（包括FinFET）的计算机设计目标，可改善光刻技术的产品性能

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In order to meet current and future node overlay, CD and focus requirements, metrology and process control performance need to be continuously improved. In addition, more complex lithography techniques, such as double patterning, advanced device designs, such as FinFET, as well as advanced materials like hardmasks, pose new challenges for metrology and process control. In this publication several systematic steps are taken to face these challenges.

机译：为了满足当前和将来的节点覆盖，CD和焦点要求，计量和过程控制性能，需要不断提高。此外，更复杂的光刻技术（如双图案），先进的器件设计（如FinFET）以及先进的材料（如硬掩模）给计量和工艺控制带来了新的挑战。在该出版物中，采取了一些系统的步骤来应对这些挑战。

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《Metrology, inspection, and process control for microlithography XXVIII》|2014年|90500S.1-90500S.10|共10页
会议地点 San Jose CA(US)
作者
Kai-Hsiung Chen; GT Huang; KS Chen; C.W. Hsieh; YC Chen; CM Ke; TS Gau; YC Ku; Kaustuve Bhattacharyya; Jacky Huang; Arie den Boef; Maurits v.d. Schaar; Martijn Maassen; Reinder Plug; Youping Zhang; Steffen Meyer; Martijn van Veen; Chris de Ruiter; Jon Wu; Hua Xu; Tatung Chow;
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Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, R.O.C.;

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, R.O.C.;

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, R.O.C.;

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, R.O.C.;

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, R.O.C.;

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, R.O.C.;

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, R.O.C.;

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, R.O.C.;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

ASML Netherlands B.V., De Run 650a, 5504 DR Veldhoven, The Netherlands;

Tokyo Electron Ltd., Akasaka Biz Tower 107-6325, Japan;

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正文语种 eng
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关键词
Overlay; focus; in-die; integrated; in-line; on-product; diffraction; scatterometer; TMU; matching; metrology; process robustness; matching to device; target design; productivity; track; MA time; High-volume manufacturing; HVM;

机译：覆盖;焦点;模内集成;排队;产品上衍射;散射仪TMU;匹配;计量工艺稳健性；与设备匹配；目标设计；生产率;跟踪; MA时间；大批量生产；人机界面;

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1. 2D TARGET DESIGN FOR HIGHER SIGNAL STRENGTH AND BEITER ON-PRODUCT FEATURE DENSITY AFTER LELE (LITHO-ETCH LITHO-ETCH) [J] . Research Disclosure . 2018,第649期

机译：LELEO-ETCH LITHO-ETCH之后的2D目标设计，可提高信号强度并提高蜂鸣器的产品功能密度
2. Multiobjective optimization for target design in diffraction-based overlay metrology [J] . Applied optics . 2020,第9期

机译：基于衍射的覆盖计量中的目标设计多目标优化
3. Self-heating-aware cell design for p-vertically-integrated nanowire on FinFET beyond 3 nm technology node [J] . Yamagishi Tomohiko, Hori Atsushi, Muneta Lriya, Japanese journal of applied physics . 2020,第SG期

机译：超过3 nm技术节点的FinFET上的P / N垂直集成纳米线的自热感知单元设计
4. Holistic approach using accuracy of diffraction-based integrated metrology to improve on-product performance, reduce cycle time and cost at litho [C] . Kaustuve Bhattacharyya, Arie den Boef, Martin Jak, Conference on metrology, inspection, and process control for microlithography XXIX . 2015

机译：使用基于衍射的集成度量的准确性的整体方法来改善产品性能，减少光刻时间并降低成本
5. Design and Performance Evaluation of 8T SRAM Cell Using FinFET and CMOS at 16nm Technology [D] . Mandadi, Prasanth. 2021

机译：在16NM技术中使用FinFET和CMOS的8T SRAM单元的设计与性能评估
6. A Computational Future for Preventing HIV in Minority Communities: How Advanced Technology Can Improve Implementation of Effective Programs [O] . C Hendricks Brown, David C. Mohr, Carlos G. Gallo, -1

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7. Design and Performance Analysis of 4-bit Nano-processor Design for Low Area, Low Power and Minimum Delay Using 32nm FinFET Technology [O] . Sujata A. A, Lalitha. Y. S 2021

机译：低面积，低功耗和32NM FINFET技术设计和性能分析，低功耗和最小延迟

Improving on-product performance at litho using integrated diffraction-based metrology and computationally designed device-like targets fit for advanced technologies (incl. FinFET)

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