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Design of 8mm Ka-band broadband LNA

机译:8mm Ka波段宽带LNA设计

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摘要

The HEMT model in this article is applied by OMMIC D01PH. In this article we design a five circuit, the first two levels are designed for minimum noise and the last three for maximum gain design. The center frequency of this design is 35 GHz with 6 GHz bandwidth, gain is greater than 30dB and the noise figure is less than 3dB. This article describes a Ka-band low-noise amplifier design idea. In this idea we put up two options for the bias circuit design, one is drain supply by a single power and the other is dual-power supply for the drain and gate. We make circuit design and simulation for each program and the simulation results were analyzed and compared.
机译:本文中的HEMT模型由OMMIC D01PH应用。在本文中,我们设计了五个电路,前两个级别用于最小噪声,后三个级别用于最大增益设计。该设计的中心频率为35 GHz,带宽为6 GHz,增益大于30dB,噪声系数小于3dB。本文介绍了Ka波段低噪声放大器的设计思想。在这个想法中,我们为偏置电路设计提出了两种选择,一种是通过单电源供电的漏极电源,另一种是用于漏极和栅极的双电源电源。我们对每个程序进行电路设计和仿真,并对仿真结果进行分析和比较。

著录项

  • 来源
    《》|2013年|266-269|共4页
  • 会议地点 Qingdao(CN)
  • 作者单位

    Microwave and Millimeter Wave Laboratory, School of Information and Electronics, Beijing Institute of Technology, 100081 Chinac;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    LNA; MMIC; bias; layout;

    机译:LNA; MMIC;偏置;布局;;

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