A Numerical Analysis of N-MoTe2 in Back Contact of CdTe Solar Cell

摘要

Thin-film PV cells with low-cost attractive materials are more appropriate over high-cost silicon-based solar cells as free renewable energy sources. Cadmium Telluride (CdTe) PV cells are widely investigated as one of the ultra-thin film PV cells. They have broadly researched to increase efficiency by improving different front contact and back contact material. In this study, the effect of unintentionally formed n-type Molybdenum Telluride (n-MoTe2) in the back contact interface between the Cadmium Telluride (CdTe) absorber layer and Mo layer has been investigated from a numerical analysis by the facilitation of AMPS-1D software. The variation of short circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF) and efficiency (n) are analyzed by changing four parameters like (i) layer thickness (ii) operating temperature (iii) donor concentration and (iv) sun intensity. From the numerical analysis a moderate performance is observed, where the efficiency of the solar cell is found about 16.532%, Jsc is 21.298 mAcm-2, Voc is 0.99 V and FF is 0.863 for the layer thickness, donor concentration, operating temperature and sun intensity at 60 nm, 1×10^{16 cm?3, 350K, and 1.1 suns respectively.}