Piezoelectric hetero-junction tunnel FET with staggered gap at off-state and broken gap at on-state

摘要

Here we propose a novel GaSb/InAs piezoelectric hetero-junction tunnel FET (PE-H-TFET) where the effective tunneling gap is modulated by gate-voltage controlled dynamic strain. In this design, the proposed PE-H-TFET changes the hetero-junction type during switching. Two design options of PE-H-TFET are proposed for different fin widths to achieve staggered gap at OFF-state and broken gap at ON-state. Source overlap is adopted to obtain a larger transition to broken gap so that an even higher ON current. The simulation results with NEGF method suggest that the proposed PE-H-TFET achieves 1.8 times enhancement of I_ON and a steep SS of 43 mV/decade. The source overlap obtains 2.5 times ON current gains.