High-Performance 40nm Gate Length InSb P-Channel Compressively Strained Quantum Well Field Effect Transistors for Low-Power (V_(CC)=0.5V) Logic Applications

摘要

This paper describes for the first time, a high-speed and low-power III-V p-channel QWFET using a compressively strained InSb QW structure. The InSb p-channel QW device structure, grown using solid source MBE, demonstrates a high hole mobility of 1,230cm~2/V-s. The shortest 40nm gate length (L_G) transistors achieve peak transconductance (G_m) of 510μS/μm and cut-off frequency (f_T) of 140GHz at supply voltage of 0.5V. These represent the highest G_m and f_T ever reported for III-V p-channel FETs. In addition, effective hole velocity of this device has been measured and compared to that of the standard strained Si p-channel MOSFET.