Advanced 2D/3D Simulations for Laser Annealed Device using an Atomistic Kinetic Monte Carlo Approach and Scanning Spreading Resistance Microscopy (SSRM)

摘要

Atomistic modeling and optimized TCAD simulation strategy for Laser-only annealing device are shown. Multiple laser annealing scans are modeled by using atomistic KMC. KMC clarified that dopant diffusion is changed as a function of laser scan number. SSRM with 1 nm special resolution is used for the 2-dimensional carrier distribution measurement and dopant active level determination. It is shown that 2D profile mapping using SSRM is useful in TCAD simulations.