Comparison of (001), (110) and (111) Uniaxial- and Biaxial- Strained-Ge and Strained-Si PMOS DGFETs for All Channel orientations: Mobility Enhancement, Drive Current, Delay and Off-State Leakage

摘要

Using the Non-local Empirical Pseudopotential method (bandstructure), Full-Band Monte-Carlo Simulations (transport), self-consistent Poisson-Schrodinger (electrostatics) and detailed Band-To-Band-Tunneling (BTBT) (including bandstructure and quantum effects) simulations, the effect of surface/channel orientation, uniaxial- and biaxial-strain, band-structure, mobility, and high-field transport on the drive current, off-state leakage and switching delay in nano-scale, strained-Si and strained-Ge, p-MOS DGFETs have been presented and the optimum strain and channel/surface orientations for highest drive-lowest delay-lowest leakage have been obtained.