High Speed Memory Operation in Channel-Last, Back-gated Ferroelectric Transistors

摘要

Scaled ferroelectric transistors (Lg =76 nm) in a back- gated configuration are fabricated with a channel-last process flow. Using this approach, optimization of the ferroelectric gate oxide film can be decoupled from that of the semiconductor channel to reduce parasitic interfaces. As a result, ferroelectric transistors with 3σ memory window for fast programming time of 10 ns (including an instantaneous read-after-write) at 1.8 V and high endurance of 10^{12 cycles are demonstrated for the first time.}