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Combined Application of AFM-XRD-SIMS to Characterize Crystal Properties in Electroless Nickel Metal Induced by Trace Contaminants

机译:AFM-XRD-SIMS在痕量污染物诱导的化学镍金属中表征晶体特性的组合应用

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The crystal properties of electroless nickel (EN) film plated on copper (Cu) bond pad (on wafer) can be differentiated by AFM (Atomic Force Microscopy) for its surface roughness and XRD (X-ray Diffraction) for its crystal orientation. The EN film deposited during the clean bath (CB) shows higher roughness under AFM and more oriented crystals under XRD, when comparing to the one from contaminated bath (COB). COB was CB pre-treated with small amount of Cu2+ and OH-. Applying Secondary Ions Mass Spectroscopy (SIMS), Cu and hydrogen (H) contaminants were found to be higher in COB processed EN film compared to the one from CB. The H contaminant in COB EN film is due to its high plating rate (with more OH-) resulting in more hydrogen gas by-product accumulation from the EN catalytic reaction. The presence of these 2 contaminants have potentially caused the change of crystal properties of the EN layer as detected by AFM and XRD.
机译:在铜(Cu)键合焊盘(在晶片上)的电镀镍(EN)薄膜的晶体性能可以通过AFM(原子力显微镜)来分化其表面粗糙度和其晶体取向的XRD(X射线衍射)。在清洁浴(CB)所示AFM在较高的粗糙度和XRD下更取向的晶体沉积,比较从被污染的浴(COB)的一个时,EN膜。 COB是用少量Cu预处理的CB 2 + - 。施加二次离子质谱(SIMS),Cu和氢气(H)污染物在COB加工的en膜中被发现较高,与来自CB的CB相比。 COB en膜中的H污染物是由于其高电镀率(更哦 - )从en催化反应中产生更多的氢气副产物积累。这2个污染物的存在可能导致由AFM和XRD检测到的ZH层的晶体性质的变化。

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