High voltage thick SOI-LIGBT with high current density and latch-up immunity

摘要

A high voltage SOI-LIGBT with high current capability and latch-up immunity is proposed in this paper. The proposed SOI-LIGBT features the segmented U-shaped N emitter and the `JFET'-region is surrounded by the U-shaped channel. The U-shaped channel significantly enhances the electron injection from the emitter to the N-drift region, which leads to an improvement on the current density. Meanwhile, the P emitter between the adjacent U-shaped N emitters forms an additional hole current path, which is beneficial to the latch-up immunity. The experiments demonstrate that the proposed SOI-LIGBT exhibits a high current density (J) of 240A/cm at V = 3V and V = 5V, a low specific on-resistance (R) of 1.25Ω·mm with breakdown voltage (BV) of 590V. The saturation current is about 550A/cm at V = 500V without latch-up issue.