Deep ultraviolet light-emitting diodes and photodetectors for UV communications

摘要

We present deep UV light-emitting diodes and photodetectors based on high Al-composition AlGaN. We haveobtained very short wavelength UV LEDs (λ<255 nm) with milliwatt level optical output powers, based on anAlGaN multiple-quantum well active region. Solar-blind photodetectors have also been fabricated with quantumefficiencies in excess of 70%. Based on these photodetectors, focal plane arrays have been fabricated.