Memory Effects in Single-Electron Nanostructures

摘要

We investigate the memory function at room temperature in devices based on quantum dots. By Low Pressure Chemical Vapour Deposition (LPCVD) we deposited Si dots embedded in SiO_2. On these devices flat band voltage shifts were well detected at low write voltages for write times of the order of milliseconds, and, furthermore, a plateau in the flat band voltage shift, maybe consequence of Coulomb blockade, was observed.