New design structure of a direct-injection input circuit with adaptive gain control techniques

摘要

Based on the application of the direct injection for per detector (DI) input technique, a new readout structure for the infrared (IR) focal-plane-array (FPA), called the variable gain direct inject per detector (VGDI) is proposed and analyzed. The readout circuit of VGDI of a unit cell of photo- voltaic sensor under investigation, is composed of a direct inject per detector circuit, high gain amplifier, and the reset switch. The VGDI readout chip has been designed in 0.5 micrometer double-poly-double-metal (DPDM) n-well CMOS technology in various formats from 8 $MUL 8 to 128 $MUL 128. The simulation 8 $MUL 8 VGDI of the readout chip have successfully verified both the readout function and performance. The high gain, low power, high sensitivity readout performances are achieved in a 50 $MUL 50 micrometer$+2$/ pixel size.