Electro-Thermal Analysis of MOSFET Amplifier circuit by the SETD Model

摘要

This paper introduces the simulation of the MOSFET common-source amplifier circuit, and provides a method to jointly solve the physical model of the device and the external circuit to simulate the transient electro-thermal characteristics of a single device in the actual operation of the circuit. The spectral element time-domain (SETD) method is used to solve the coupling drift-diffusion model equation by using the electronic quasi-fee potential, the hole quasi-Fei potential and the potential as variables. The corresponding current density and electrical strength distributed in the device can be used to couple the heat transfer equation. Furthermore, the Kirchhoff laws should be satisfied when the MOSFET device is inserted in the circuit. The numerical results demonstrate the validity of the proposed method.