首页> 外国专利> Over-current protection circuit for e.g. class D amplifier, has power MOSFETs to transmit signals taken to logic driver circuit that removes amplifier input circuit, when driver circuit indicates presence of over-current condition

Over-current protection circuit for e.g. class D amplifier, has power MOSFETs to transmit signals taken to logic driver circuit that removes amplifier input circuit, when driver circuit indicates presence of over-current condition

机译:过电流保护电路,例如D类放大器,具有功率MOSFET,可将信号传输到逻辑驱动器电路,当驱动器电路指示存在过流情况时,该逻辑驱动器电路会删除放大器输入电路

摘要

The circuit has power MOSFETs (PM 12, PM 14, NM22, NM24), each with a current sensor to detect an over-current condition in a bridge. The MOSFETs transmits signals taken to a logic driver circuit (14) that removes an amplifier input circuit when the logic driver circuit indicates that an over-current condition is present. Current through the monitoring MOSFETs is transmitted through a speaker (20). Independent claims are also included for the following: (A) a switching amplifier having a control circuit (B) a method of preventing excess current from flowing in a switching amplifier.
机译:该电路具有功率MOSFET(PM 12,PM 14,NM22,NM24),每个功率MOSFET都有一个电流传感器以检测电桥中的过电流情况。 MOSFET将获取的信号传输到逻辑驱动器电路(14),当逻辑驱动器电路指示存在过流情况时,该逻辑驱动器电路会删除放大器输入电路。通过监控MOSFET的电流通过扬声器(20)传输。还包括以下各项的独立权利要求:(A)具有控制电路的开关放大器(B)防止过量电流流入开关放大器的方法。

著录项

  • 公开/公告号NL1027968C2

    专利类型

  • 公开/公告日2006-04-26

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号NL20051027968

  • 发明设计人 JAE-YOUNG SHIN;

    申请日2005-01-06

  • 分类号H03F1/52;

  • 国家 NL

  • 入库时间 2022-08-21 21:38:23

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