Efficacy of Non-Uniformly Doped and Multi-Layered Gate Dielectric Designs in Improving Device Perfomance of Elliptical MOSFETs

摘要

An analytical model for a novel device concept, Non-uniformly doped-Multilayered Gate Dielectric-Elliptical Gate All Around (NUD-MG-EG) MOSFET is presented. For deriving the model, Poisson's equation in cylindrical coordinates is solved using effective radius for elliptical crosssection (Rellip) to study the electrical characteristics of the proposed device. The results obtained using the derived model are compared with Elliptical Gate All Around (EG) MOSFET, Multilayered Gate Dielectric Elliptical Gate All Around (MGEG) MOSFET, Non-uniformly doped channel Elliptical Gate All Around (NUD-EG) MOSFET to examine the robustness of the proposed device in improving device performance. The results demonstrate that the proposed device, NUD-MG-EG exhibits substantially improved gate control and consequently better short channel immunity in comparison to devices without NUD channel or multiple layered gate dielectric designs.