Impact of random telegraph noise on ring oscillators evaluated by circuit-level simulations

摘要

Random Telegraph Noise (RTN) has become dominant with transistor rapid scaling in recent years. We simulate RTN-induced frequency fluctuation of Ring Oscillators (ROs) using a circuit-level simulator to replicate measurement results from previous works. Consequently, we can predict dependences of frequency fluctuation on operating voltages, number of ROs stages, gate widths, and body biases.