Promising Halide Perovskite: The Application in Field-Effect Transistors

摘要

As the main component in electronic circuits, field-effect transistors (FETs) are indispensable in modern semiconductor industry. Thus, choosing appropriate functional layer materials has become an urgent matter to be solved. In recent years, halide perovskite is considered a favorable competitor with the continuously mature synthesis technologies. Especially, the effective light absorption and high charge carrier mobility make it possible to improve the performance of FETs. In this work, we summarized several representative halide perovskite-based FETs including thin-films, single crystals and mixed function layers. First, the perovskite films that can exhibit field-effect characteristics at low or normal temperature were introduced. Afterward, considering that there have no crystal boundaries in single crystals and mixed functional layers will be good for combining the advantages of different materials, typical corresponding devices were investigated in detail. Finally, the potential development of halide perovskite-based FETs in the future were outlined from three aspects.