Optical investigations of thermally evaporated Ge_(10)Se_(60)Te_(30) and Ge_8Se_(60)Te_(30)In_2 chalcogenide thin film for optical memory devices

摘要

A comparative study of optical constants (% T, α, k and E_g) for thermally evaporated Ge_(10)Se_(60)Te_(30) and Ge_8Se_(60)Te_(30)In_2 thin films have been done in the present study. X-ray diffraction study revealed structural information of prepared films. SEM and EDS measurements are used for surface morphology and elemental analysis respectively. The optical band gap (E_g) of quaternary compound is found to be more as compared to ternary thin film and this increment is explained using electronegativity of glassy alloys.