Innovative high-density ESD protection device in state of the art UTBB FDSOI technologies

机译：utBB FDSOI技术的创新高密度ESD保护装置

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For the first time, we demonstrate an innovative way to build ESD protection in FDSOI technologies. This protection is comprised of two stacked devices one on the other: a bottom bulk-thyristor and a top thin film triggering device. Low leakage current, tunable triggering voltage and high current capability are highlighted.

机译：我们首次展示了在FDSOI技术中建立ESD保护的创新方法。该保护由另一个堆叠设备组成：底部散装晶体管和顶部薄膜触发装置。突出显示低漏电流，可调触发电压和高电流能力。

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《Electrical Overstress/Electrostatic Discharge Symposium》|2015年||共7页
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Fonteneau Pascal; Solaro Yohann; Marin-Cudraz David; Legrand Charles-Alexandre; Fenouillet-Beranger Claire;
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中图分类电器;
关键词
electrostatic discharge; leakage currents; silicon-on-insulator; thyristors; Si; bottom bulk-thyristor; high current capability; innovative high-density ESD protection device; leakage current; stacked devices; state of the art UTBB FDSOI technology; top thin film triggering device; tunable triggering voltage; Anodes; Current measurement; Electrostatic discharges; Junctions; Leakage currents; Logic gates; Thyristors;

机译：静电放电;漏电流;绝缘体;晶体管;Si;底部散晶晶体;高电流能力;创新的高密度ESD保护装置;漏电流;堆叠器件;艺术型螺丝玻璃技术;顶部薄膜触发装置;可调触发电压;阳极;电流测量;静电放电;结合;漏电流;逻辑门;晶闸管;

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专利

1. Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model [J] . Poiroux T., Rozeau O., Scheer P., Electron Devices, IEEE Transactions on . 2015,第9期

机译：Leti-UTSOI2.1：UTBB-FDSOI技术的紧凑模型—第一部分：接口电位分析模型
2. Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part II: DC and AC Model Description [J] . Poiroux Thierry, Rozeau O., Scheer Patrick, Electron Devices, IEEE Transactions on . 2015,第9期

机译：Leti-UTSOI2.1：用于UTBB-FDSOI技术的紧凑模型-第二部分：DC和AC模型说明
3. Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices [J] . Furbock C., Litzenberger M., Gornik E., Journal of Electrostatics . 2000,第3a4期

机译：智能电源技术ESD保护设备的ESD应力和故障分析期间的干涉式温度映射
4. Innovative high-density ESD protection device in state of the art UTBB FDSOI technologies [C] . Fonteneau Pascal, Solaro Yohann, Marin-Cudraz David, Electrical Overstress/Electrostatic Discharge Symposium . 2015

机译：先进的UTBB FDSOI技术创新型高密度ESD保护设备
5. Modeling, simulation and design of EOS/ESD protection devices and circuits in silicon-on-insulator technology. [D] . Raha, Prasun Kumar. 1998

机译：绝缘体上硅技术中的EOS / ESD保护器件和电路的建模，仿真和设计。
6. Robust and Latch-Up-Immune LVTSCR Device with an Embedded PMOSFET for ESD Protection in a 28-nm CMOS Process [O] . Ruibo Chen, Hongxia Liu, Wenqiang Song, 2020

机译：具有嵌入式PMOSFET的鲁棒和锁定的免疫LVTSCR器件用于28 nm CMOS过程中的ESD保护
7. GDNMOS and GDBIMOS devices for high voltage ESD protection in thin film advanced FD-SOI technology [O] . Louise De Conti, Thomas Bedecarrats, Sorin Cristoloveanu, 2019

机译：用于高压ESD保护的GDNMOS和GDBIMOS器件在薄膜高级FD-SOI技术中

Innovative high-density ESD protection device in state of the art UTBB FDSOI technologies

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