Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model

摘要

A detailed presentation of the latest version of the Leti-UTSOI compact model is provided. Leti-UTSOI2 is the first available model able to describe the behavior of low-doped ultrathin body and buried oxide fully depleted silicon-on-insulator transistors in all bias configurations, including strong forward back bias. In this part, a full analytical calculation of interface potentials, valid for all regimes of independent double-gate device operation, is detailed. This analytical computation, which is the heart of Leti-UTSOI2, provides explicit expressions for all quantities required to build dc and ac core models.