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Design of non-contact 2Gb/s I/O test methods for high bandwidth memory (HBM)

机译:高带宽存储器(HBM)的非接触式2GB / S I / O测试方法的设计

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This paper presents a HBM device which verifies DC and AC characteristics of I/O circuits without direct contact on the u-bump. To verify DC and AC characteristics internally, design for excellence (DFx) circuits are implemented. Also, to perform accurate impedance calibration without ZQ pin, reference resistor calibration logic is embedded. In comparison of DFx AC result and automatic test equipment measurement result, it is confirmed that the DFx AC operation is well correlated with normal operation up to 2Gb/s.
机译:本文介绍了一个HBM设备,验证I / O电路的DC和AC特性,而不会直接接触U-Bump。 为了验证内部DC和AC特性,实现了卓越(DFX)电路的设计。 此外,为了执行无ZQ引脚的准确阻抗校准,嵌入了参考电阻校准逻辑。 在DFX AC结果和自动测试设备测量结果的比较中,确认DFX AC操作与正常操作良好相关,高达2GB / s。

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