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Design of non-contact 2Gb/s I/O test methods for high bandwidth memory (HBM)

机译:高带宽存储器(HBM)非接触式2Gb / s I / O测试方法的设计

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摘要

This paper presents a HBM device which verifies DC and AC characteristics of I/O circuits without direct contact on the u-bump. To verify DC and AC characteristics internally, design for excellence (DFx) circuits are implemented. Also, to perform accurate impedance calibration without ZQ pin, reference resistor calibration logic is embedded. In comparison of DFx AC result and automatic test equipment measurement result, it is confirmed that the DFx AC operation is well correlated with normal operation up to 2Gb/s.
机译:本文介绍了一种HBM设备,该设备可验证I / O电路的直流和交流特性,而无需直接接触u型凸块。为了在内部验证DC和AC特性,实施了卓越设计(DFx)电路。另外,为了在没有ZQ引脚的情况下执行准确的阻抗校准,需要嵌入参考电阻校准逻辑。通过比较DFx AC结果和自动测试设备测量结果,可以确认DFx AC操作与高达2Gb / s的正常操作具有良好的相关性。

著录项

  • 来源
  • 会议地点 Toyama(JP)
  • 作者单位

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

    Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Resistors; Calibration; Phase locked loops; Resistance; MOS devices; Voltage measurement; Bandwidth;

    机译:电阻;校准;锁相环;电阻; MOS器件;电压测量;带宽;

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