Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Samsung Electronics, DRAM Design Team, Hwaseong-si, Gyeonggi-do, Korea 18448;
Resistors; Calibration; Phase locked loops; Resistance; MOS devices; Voltage measurement; Bandwidth;
机译:高带宽内存(HBM)测试挑战和解决方案
机译:具有有效I / O测试电路的1.2 V 8 Gb 8通道128 GB / s高带宽存储器(HBM)堆叠式DRAM
机译:大于256 GB / s的高带宽内存(HBM)的偏斜消除技术
机译:高带宽存储器(HBM)的非接触式2GB / S I / O测试方法的设计
机译:视觉短期记忆的容量决定了信息传输到视觉长期记忆的带宽。
机译:基于非接触位移测量的三机器人设计
机译:砷化镓DRAM存储单元设计与测试方法评估