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54 GHz CMOS LNAs with 3.6 dB NF and 28.2 dB gain using transformer feedback Gm-boosting technique

机译:54 GHz CMOS LNA,采用3.6 dB NF和28.2 DB增益,使用变压器反馈通用促进技术

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This paper presents a novel topology of low-noise amplifier (LNA) with noise reduction and gain improvement. A transformer feedback g-boosting technique is proposed in a single-ended cascode LNA to reduce the noise figure (NF) and improve the gain simultaneously. Two 54 GHz single-ended cascode LNAs, with transformer and transmission-line for matching, respectively, are demonstrated to verify this technique. Fabricated in a 65 nm CMOS process, the transformer-based (TF-based) LNA exhibits a minimum noise figure (NF) of 3.6 dB at 53.5 GHz and a highest power gain of 28.2 dB at 54 GHz in measurement. To our best knowledge, this LNA has the best noise figure and power gain among all the published V-band CMOS LNAs. The transmission-line-based (TL-based) LNA exhibits a minimum noise figure of 3.8 dB at 53.9 GHz and a highest power gain of 25.4 dB at 54.2 GHz in measurement. Both the LNAs consume 18 mA from a power supply of 1.1 V.
机译:本文介绍了低噪声放大器(LNA)的新型拓扑,降噪并增益改进。在单端式Cascode LNA中提出了一种变压器反馈G升压技术,以减少噪声系数(NF)并同时提高增益。分别有两个54 GHz单端式CASCODE LNA,分别具有变压器和匹配的传输线,以验证这种技术。在65nm CMOS工艺中制造,基于变压器的(TF基)LNA在53.5GHz处具有3.6 dB的最小噪声系数(NF),并且在测量中为54GHz的最高功率增益为28.2dB。为了我们的最佳知识,该LNA在所有已发布的V波段CMOS LNA中具有最佳噪声数字和功率增益。基于透射线的(基于TL的)LNA在测量中显示出53.9GHz的最小噪声系数为3.8 dB,最高功率增益为25.4dB。 LNA都消耗了1.1 V的电源18 mA。

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