CMOS integrated circuits; low noise amplifiers; millimetre wave amplifiers; millimetre wave integrated circuits; V-band CMOS LNA; current 18 mA; frequency 53.5 GHz; frequency 53.9 GHz; frequency 54 GHz; frequency 54.2 GHz; gain 25.4 dB; gain 28.2 dB; gain 3.8 dB; low-noise amplifier; noise figure; noise figure 3.6 dB; noise reduction; size 65 nm; transformer feedback Gm-boosting; transmission-line; voltage 1.1 V; CMOS integrated circuits; Gain; Noise; Noise figure; Topology; Transistors; Low-noise amplifier (LNA); V-band; noise figure (NF); power gain; transformer; transmission-line;
机译:具有65nm CMOS的55–64GHz低功耗小面积LNA,具有3.8dB的平均NF和〜12.8dB的功率增益
机译:3.7 mW 24 GHz LNA,具有0.11; C; m CMOS技术的10.1 dB增益和4.5 dB NF
机译:在90nm CMOS中具有18.6dB增益和5.7dB NF的60GHz LNA
机译:采用变压器反馈Gm增强技术的具有3.6 dB NF和28.2 dB增益的54 GHz CMOS LNA
机译:可制造60GHz CMOS LNA的设计技术。
机译:使用标准BSI工艺制造的3.0μm三倍增益像素的90 dB以上场景内单曝光动态范围CMOS图像传感器
机译:具有4.7 dB NF和19.8 dB增益的24 GHz增强中和的Cascode LNA