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New concept for post-CMOS pellistor integration

机译:CMOS Pellistor集成的新概念

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Gas sensors are crucial instruments to detect the exposure of combustile and toxic gases at an early stage. The relevance to manufacture gas sensors decreasing in size and power consumption is growing continuously to reduce production costs and enable reliable handheld devices. This paper presents a new approach for processing a novel nano-pellistor. The production is based on a process used for fabricating 3D-nanostructures. A process sequence is presented which uses atomic layer deposition (ALD) and deep reactive ion etching (DRIE) to build a free-standing gas sensor above a CMOS circuit. Simulations are performed to ensure the most promising performance of the sensors. A square shape structure is the most advantageous heater with a homogeneous heat distribution. Furthermore, an expected heater power consumption of 7.18mW is determined by simulations. The investigations on the influence of an insulation layer enclosing the heater show that the temperature difference on the heater decreases from 28 deg C (assumed in air) to 11 deg C. A change in the pillar shape for contacting the gas sensor reduces the current density from 1.33·10(exp 11) A/m2 to 4.36·10(exp 10) A/m2.
机译:气体传感器是在早期阶段检测燃烧和有毒气体暴露的重要仪器。制造气体传感器的尺寸和功耗下降的相关性连续增长,以降低生产成本并实现可靠的手持设备。本文提出了一种加工新型纳米玻璃器的新方法。生产基于用于制造3D纳米结构的过程。提出了一种方法序列,其使用原子层沉积(ALD)和深反应离子蚀刻(DRIE)来构建在CMOS电路上方的独立气体传感器。进行模拟以确保传感器最有希望的性能。方形结构是具有均匀热分布的最有利的加热器。此外,通过模拟确定了7.18mW的预期加热器功耗。对封闭式加热器的绝缘层的影响的研究表明加热器上的温差从28℃(空气中的假设)降低至11℃。用于接触气体传感器的柱形的变化降低了电流密度从1.33·10(exp 11)A / M2至4.36·10(EXP 10)A / M2。

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