Investigating Scattering effects in Nano-scale Double Gate MOSFETs by Using Direct Solution of the Boltzmann Transport Equation and Poisson-Schrodinger Equation Method

摘要

As gate length of MOSFETs scaling down to nano-scale, both quantization and quasi ballistic transport becomes obviously. Ballistic transport approaches can account in a fairly natural way for quantum mechanical effects[1,2], however scattering still influences the ON currents of nano-scale devices[3]. In nano-scale MOSFETs, the dimensionality is reduced due to the quantum confinement; it is possible to directly solve the BTE and to couple it to the Schrodinger equation [4-6]. However, relaxation time approximation is used to dealing with the scattering effect in recent works[4-6]. In this work the lattice scattering is carefully involved in a direct solution of the BTE and Poisson-Schrodinger equation method [7]. Scattering effects in nano-scale double gate (DG) MOSFET are evaluated.