首页> 外文会议>Silicon Nanoelectronics Workshop >Low-Latency BCH-CRC Decoder for 3D CT NAND Flash Memory Applications
【24h】

Low-Latency BCH-CRC Decoder for 3D CT NAND Flash Memory Applications

机译:用于3D CT NAND闪存应用的低延迟BCH-CRC解码器

获取原文

摘要

This paper presents a low-latency BCH-CRC decoder for 3D CT NAND flash memory. The presented decoder uses the hard-decision values as the input, which can avoid the energy-consuming sensing operations for generating the soft-decision values and hence extend the life time of flash memory. In order to improve the error correction performance, a BCH-CRC concatenated coding scheme is developed. Moreover, the BCH decoding algorithm is optimized to reduce the overall cost of the decoder. We implement the proposed decoder targeting at 3D CT NAND flash memory applications. The user data length is 512 bytes, which is divided into four segments. A 16-bit CRC is appended to each segment, and then the message sequence is encoded by a BCH code with 9-bit error correction capacity. The decoder is realized in a 65nm CMOS process, which can achieve a decoding throughput of 191MB/s with latency 2.795µs.
机译:本文介绍了3D CT NAND闪存的低延迟BCH-CRC解码器。 所提出的解码器使用硬判决值作为输入,这可以避免用于产生软判决值的能量感测操作,从而延长闪存的寿命。 为了提高纠错性能,开发了BCH-CRC级联编码方案。 此外,BCH解码算法经过优化以降低解码器的总成本。 我们在3D CT NAND闪存应用程序中实现了针对3D CT NAND闪存应用程序的提出的解码器。 用户数据长度为512字节,分为四个段。 将16位CRC附加到每个段,然后通过具有9比特纠错容量的BCH码编码消息序列。 解码器在65nm CMOS过程中实现,其可以实现191MB / s的解码吞吐量,其延迟2.795μs。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号