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A general overview of memristor devices

机译:Memitristor设备的一般概述

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The nanoscale memristive devices will contribute to the development of new applications in the field of micro and nanoelectronics. Indeed, these nanodevices can bring new architectures and configurations, through their sizes, consumptions, functioning and their electronic properties, which differ considerably from the old devices. In 1971, Prof. Leon Chua of UC Berkeley has claimed that a fourth passive device should exist, which holds the relationship between magnetic flux and electric charge. In addition, this device named “memristor” was only manufactured in 2008 by HP Lab team. He also proved that the behavior of the memristor should complement the functions of the other three passive elements by bringing a new dynamic. The aim of this paper is to understand the memristor's operation, to introduce and to model its operation for new electronic functions, essentially nonlinear, and to reinforce its integration with other architectures such as CMOS.
机译:纳米级椎间盘器件将有助于在微型和纳米电子领域开发新应用。实际上,这些纳米纳米图可以通过它们的尺寸,消费,功能及其电子特性来带来新的架构和配置,这与旧设备相差。 1971年,UC Berkeley的Leon Chua教授声称应该存在第四个被动装置,其具有磁通量和电荷之间的关系。此外,该设备名为“Memristor”仅由HP Lab团队于2008年制造。他还证明了回忆记忆的行为应该通过带来新的动态来补充其他三个被动元素的功能。本文的目的是了解忆阻器的操作,介绍和模拟其新的电子功能的操作,基本上是非线性的,并加强与CMO等其他架构的集成。

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