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A Low Noise CMOS Bandgap Voltage Reference Using Chopper Stabilization Technique

机译:使用斩波稳定技术的低噪声CMOS带隙电压参考

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摘要

A low noise CMOS bandgap voltage reference is designed using the noise reduction technique of chopper stabilization in this paper. The mechanism of the proposed chopper technique is discussed in detail and the corresponding circuit was designed and fabricated using a high temperature and high pressure CMOS 0.18mu m$ technology. The experimental results show that the output noise power spectral density was reduced by 60dB at 1Hz. In addition, the untrimmed voltage reference has a temperature coefficient in the −45°C to +175°C range of 43ppm/°C (mean) at a +5 V power supply.
机译:使用本文的斩波稳定性的降噪技术设计了低噪声CMOS带隙电压参考。详细讨论了所提出的斩波技术的机理,并使用高温和高压CMOS设计和制造相应的电路 0.18 mu m $ 技术。实验结果表明,输出噪声功率谱密度在1Hz时减少了60dB。另外,未经限制的电压基准在-45°C至+ 175°C范围内的温度系数为+5V电源的43ppm /°C(平均值)。

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