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Recent Advances in Glow Discharge Optical Emission Spectroscopy for characterization of layers/film used in the Photovoltaic field

机译:发光放电光发射光谱的最新进展,用于表征光伏场中使用的层/膜

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Glow Discharge - Optical Emission Spectroscopy (GD-OES) complements other surface/depth profile analysis techniques as Auger, SIMS, XPS for the characterization of thin and thick film/layers. Thanks to the Pulsed Rf Source, any material, conductive and non conductive, can be analyzed. Single or multiple layers from the nm to several 100 microns thickness can be sputtered in minutes on any type of substrates (rigid, flexible, glass, steel, Si...). Dynamic in terms of concentration is from ppm to 100%. O, N, H, Cl, F and Li can easily be analyzed in addition to any other elements. The practical benefits of Pulsed Rf GD-OES for fast Elemental Depth Profile of PV cells is presented below, illustrated by examples on CIGS.
机译:发光放电 - 光发射光谱(GD-OES)将其他表面/深度剖面分析技术与螺旋钻,SIMS,XPS相提并论,用于薄薄膜/层的表征。由于脉冲RF源,可以分析任何材料,导电和不导电。可以在任何类型的基板上以几分钟(刚性,柔性,玻璃,钢,Si ......)在几分钟内溅射来自NM至几个100微米厚度的单层或多层。在浓度方面的动态来自ppm至100%。除了任何其他元件之外,还可以容易地分析O,N,H,CL,F和Li。下面给出了PV电池的快速元素深度分布的脉冲RF GD-OE的实际益处,通过CIGS的实施例说明。

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