High-Power Flip-Chip Monolithically integrated Light-Emitting diodes: Based on Self-Isolation Technology

摘要

In this paper, we proposed an innovation flip-chip bonding approach for high-power flip-chip monolithically integrated LEDS(MI-LED), termed as "self-isolation technology". This technology improves the heat dissipation ability of the device, ensure the conductivity of the chip and effectively reduces the alignment accuracy of the flip-chip bonding requirement.