Design / technology co-optimization of strain-induced layout effects in 14nm UTBB-FDSOI CMOS: Enablement and assessment of continuous-RX designs

摘要

We report on the main local layout effect in 14nm Ultra-Thin Buried oxide and Body Fully Depleted Silicon On Insulator (UTBB-FDSOI) CMOS technology [1]. This effect is demonstrated by Nano-Beam Diffraction to be directly induced by the strain in the SiGe channel and reproduced by an accurate electrical compact model. An original continuous-RX design optimizes the stress management, maintaining longitudinal stress component while relaxing the transverse one. A 28% ring oscillator delay improvement is experimentally demonstrated at same leakage for 1-finger inverter at VDD=0.8V supply voltage and a frequency gain up to 15% is simulated in a critical path of an A9 core.