We achieved a novel low voltage operating flash memory cell with high coupling ratio of 0.9 which has a horned floating gate (FG) with fine HSG. The increase in the coupling ratio can reduce programming and erasing operation voltages by a maximum 4 V. Enlargement of the FG surface area by extending in the vertical direction enables the high coupling ratio without increasing cell area. In addition, the increase in the coupling ratio is significant when cell size is shrunk. We consider the horned FG cell with HSG as the most promising candidate for the flash memory cell in 0.25 and 0.18 /spl mu/m design rules.
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机译:我们达到了具有高0.9的高耦合比的新型低压操作闪存单元,其具有具有精细HSG的有角浮栅(FG)。耦合比的增加可以通过最大4V来减少编程和擦除操作电压。通过在垂直方向上延伸,FG表面区域的放大能够实现高耦合比而不增加电池区域。此外,当细胞尺寸缩小时,耦合比的增加是显着的。我们认为HOSED的FG单元格HSG是0.25和0.18 / SPL MU / M设计规则中闪存单元最有前途的候选者。
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