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Feng Shui of supercomputer memory positional effects in DRAM and SRAM faults

机译:冯水的超级计算机存储器位置效果在DRAM和SRAM故障中

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Several recent publications confirm that faults are common in high-performance computing systems. Therefore, further attention to the faults experienced by such computing systems is warranted. In this paper, we present a study of DRAM and SRAM faults in large high-performance computing systems. Our goal is to understand the factors that influence faults in production settings. We examine the impact of aging on DRAM, finding a marked shift from permanent to transient faults in the first two years of DRAM lifetime. We examine the impact of DRAM vendor, finding that fault rates vary by more than 4x among vendors. We examine the physical location of faults in a DRAM device and in a data center; contrary to prior studies, we find no correlations with either. Finally, we study the impact of altitude and rack placement on SRAM faults, finding that, as expected, altitude has a substantial impact on SRAM faults, and that top of rack placement correlates with 20% higher fault rate.
机译:几个最近的出版物确认在高性能计算系统中的故障很常见。因此,有必要进一步关注这种计算系统所经历的故障。在本文中,我们在大型高性能计算系统中展示了DRAM和SRAM故障的研究。我们的目标是了解影响生产环境中缺陷的因素。我们检查老龄化对DRAM的影响,在DRAM寿命的前两年中找到了从永久性的瞬态断层的显着转变。我们检查DRAM供应商的影响,发现厂商之间的故障率因4倍而异。我们在DRAM设备和数据中心中检查故障的物理位置;与先前的研究相反,我们发现任何一种都没有任何相关性。最后,我们研究了高度和机架放置对SRAM故障的影响,发现,正如预期的那样,海拔高度对SRAM故障产生了大量影响,并且机架放置顶部与20%的故障率相关联。

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